الأبحاث المنشورة

عنوان البحثاسم المجلةموضوع البحثسنة النشرDOIالرابط الالكتروني
Analysis of One-, Two-, and Four-Nucleon Transfer Reactions Based on The Diffraction ModelJournal of The Physical society of JapanNuclear Physis2023  زيارة الرابط
Numerical modelling based on the analytical solution of the steady-state small signal photocarrier grating equations and analysis of field-dependent measurements for non-crystalline Si: H samplesInternational Journal of Modern Physics bSemiconductor Physics2023  زيارة الرابط
Simulation and Analysis of Field-dependent Measurements for Different a-Si:H and nc-Si:H SamplesJordan Journal of PhysicsSemiconductor Physics2023  زيارة الرابط
Analytical solution of phototransport problem under the presence of a small-signal photocurrent based on method of weighted residualsResults in PhysicsSemiconductor Physics2020  زيارة الرابط
Electrical properties of Ga-doped ZnO nanowires/Si heterojunction diodeMaterials ExpressNanocrystalline semiconductors2020  زيارة الرابط
ZnO Nanowalls/Si Substrate Heterojunction Assembly: Morphological, Optical and Electrical PropertiesJournal of Nanoelectronics and optoelectronicsNanocrystalline semiconductors2020  زيارة الرابط
Analysis of elastic scattering of 4He+ 58Ni and 4He+ 60Ni using semiclassical modelsAIPNuclear Physics2017  زيارة الرابط
Analytical Solution of Steady-State Transport Equation for Photocarriers in CdTe Photovoltaics Under Bias-Dependent PhotoluminescenceJournal of Nanoelectronics and OptoelectronicsNanocrystalline Semiconductors2017  زيارة الرابط
Fabrication of Heterojunction Diode Based on n-ZnO Nanowires /p-Si Substrate: Temperature Dependent Transport CharacteristicsJournal Of Nanoscience and NanotecnologyNanocrystalline Semiconductors2017  زيارة الرابط
Fabrication of ZnO Nanorods Based p–n Heterojunction Diodes and Their Electrical Behavior with TemperatureJournal of Nanoelectronics and OptoelectronicsNanocrystalline Semiconductors2017  زيارة الرابط
The use of a combined parametrised model for analysis of elastic scattering processes of 28Si by different targets of 232Th, 209Bi and 197Au at laboratory energy of 179MeVAIPNuclear Physics2017  زيارة الرابط
An Analysis of Heavy-Ion Elastic Scattering Processes Using Numerical Model Based on the Partial-Wave Parametrised S-Matrix with Regge Pole FactorBrazilian Journal of PhysicsNuclear Reactions2016  زيارة الرابط
An Analysis of Heavy-Ion Elastic Scattering Processes Using Numerical Model Based on the Partial-Wave Parametrised S-Matrix with Regge Pole FactorBrazilian Journal of PhysicsNuclear Physics2016  زيارة الرابط
Fabrication of Heterojunction Diode Based on n-ZnO Nanowires /p-Si Substrate: Temperature Dependent Transport CharacteristicsJournal of Nanoscience and NanotechnologyNanocrystalline Semiconductors2016  زيارة الرابط
Fabrication and Characterization of n-ZnO HexagonalNanorods/p-Si Heterojunction Diodes:Temperature-Dependant Electrical CharacteristicsJournal of Nanotechnology and NanoscienceNanocrystalline2015  زيارة الرابط
Regge Pole Analysis of Elastic Scattering of ? Particles by Even Isotopes of Ni Target at Incident Energies Above Coulomb BarrierInternational Journal of Modern Physics ENuclear Reactions2015  زيارة الرابط
Regge Pole Analysis of Elastic Scattering of ? Particles by Even Isotopes of Ni Target at Incident Energies Above Coulomb BarrierInternational Journal of Modern Physics ENuclear Physics2015  زيارة الرابط
Synthesis and Properties of Aligned ZnO Nanorods on Si Substrate and Their Applications for p-Si/n-ZnO Heterojunction DiodeJournal of Nanoelectronics and OptoelectronicsNanocrystaline Semiconductors2015  زيارة الرابط
Temperature-Dependent Electrical Properties of Sn-Doped ZnO NanowiresScience of Advanced MaterialsNanocrystalline Semiconductors2015  زيارة الرابط
Temperature-Dependent Electrical Properties of Sn-Doped ZnO NanowiresScience of Advanced MaterialsNanocrystalline Semiconductors2015  زيارة الرابط
9. Growth and Properties of Sn-Doped ZnO Nanowires for Heterojunction Diode ApplicationScience of Advanced Materials Nanocrystalline Semiconductors2014  زيارة الرابط
Nanocrystalline and amorphous silicon as competing candidates for PV applicationsJournal of Material Science and Technology ResearchNanocrystalline Semiconductos2014  زيارة الرابط
Synthesis and Characterization of Iron Oxide Nanoparticles for Phenyl Hydrazine Sensor ApplicationsSensor Letters Nanocystalline Semiconductors2014  زيارة الرابط
Analysis of Diffractive Features in Elastic Scattering of 7Li by Different Target NucleiAIP Conference Proceedings Nuclear Reactions2013  زيارة الرابط
Electrical properties of solution processed p-SnS nanosheet/n-TiO2 heterostructure assemblyApplied Physics LettersNanocrystalline Semiconductors2013  زيارة الرابط
Exploring Diffractive Features of Elastic Scattering of 6Li on Different Nuclei atCanadian Journal of PhysicsNuclear Reactions2013  زيارة الرابط
n-ZnO Based Nanostructure/p-Silicon Substrate Based Efficient p-n Heterojunction DiodeScience of Advanced MaterialsNanocrystalline Semiconductors2013  زيارة الرابط
Temperature Dependant Structural and Electrical Properties of ZnO Nanowire NetworksJournal of Nanoscience and NanotechnologyNanocrystalline Semiconductors2012  زيارة الرابط
The Effect of Power Density on Diusion Length and Energy Gap of a-Si:H and nc-Si:H Thin Films Prepared by PECVD Technique Acta Physica Polinica ANanocrystalline semiconductors2012  زيارة الرابط
The Effect of Helium Dilution on Optical and Photoelectric Properties of a-Si: H Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition TechniqueArabian Journal for Science and EngineeringNanocrystaline or/and Microcrystalline Semiconductors2012  زيارة الرابط
Electrical Properties of p-Si/n-ZnO Nanowires Heterojunction DevicesAdvanced Science LettersNanocrystalline Semiconductors2011  زيارة الرابط
STRONG ABSORPTION ANALYSIS OF ELASTIC SCATTERING REACTIONS USING McINTYRE AND FRAHN VENTER MODELSInternational Journal of Modern Physics ENuclear Elastic Scattering of Heavy Ions2010  زيارة الرابط
Synthesis and characterization of hexagonal zinc oxide nanorods on silicon for the fabrication of p-Si/ n-ZnO heterojunction devicesJournal of alloys and compoundsNanocrystalline semicondutors2010  زيارة الرابط
Synthesis and characterization of zinc oxide nanorods on silicon for the fabrication of p-Si/n-ZnO heterojunction diodeJournal of Alloys and CompoundsNanocrystalline Semiconductors2010  زيارة الرابط
A study of optical properties of hydrogenated microcrystalline silicon films prepared by plasma enhanced chemical vapor deposition technique at different conditions of excited power and pressureVacuumMicrocrystalline or/and Nanocrystalline Semiconductors2009  زيارة الرابط
Minority-Carrier Properties of Microcrystalline GermaniumJOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALSMicrocrystalline or/and Nanocrystalline Semiconductors2009  زيارة الرابط
Phenomenological analysis of elastic scattering reactions using different modelsBrazilian Journal of Physics Nuclear Physics2009  زيارة الرابط
The influence of change in silane concentration and substrate temperature on optical properties of hydrogenated microcrystalline silicon filmsJOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALSMicrocrystalline and/or Nanocrystalline Semiconductors2009  زيارة الرابط
A study of field dependent steady-state photocarrier grating measurements for microcrystalline semiconductors using different theoretical methodsJOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALSMicrocrystalline and/or Nanocrystalline Semiconductors2008  زيارة الرابط
Investigation of Optical Properties of Hydrogenated Microcrystalline SiliconInternational Materials Technology Conference Microcrystalline Semicondutors2008  زيارة الرابط
A theoretical study of elastic scattering reactions based on the diffraction modelNew Horizons in Science and their ApplicationsNuclear Physics2007  زيارة الرابط
Analysis of field dependent steady-state photocarrier grating measurements on polymorphous and microcrystalline silicon filmsJournal of Materials: Materials in ElectronicsMicrocrystalline and/or Nanocrystalline Semiconductors2007  زيارة الرابط
Estimations of Carrier Mobility and Trapped-Carrier Density of States for Macrocrystalline Silicon Semiconductors fromAnalysis of Field Dependent Steady-State Photocarrier Grating Measurements AIP ProceedingMicrocrystalline Semiconductors2007  زيارة الرابط
Relation between the dark and photoelectronic properties of microcrystalline siliconJOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALSMicrocrystalline and/or Nanocrystalline Semicondcutors2007  زيارة الرابط
On electronic properties from the application of field dependence SSPG approach to polymorphous and microcrystalline silicon semiconductorsJOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS Microcrystalline Semiconductors2006  زيارة الرابط
Electric-Field Dependence of Photocarrier Properties in the Steady-State Photocarrier Grating ExperimentMRSMicrocrystalline Semiconductors2004  زيارة الرابط
Electric-field dependence of photocarrier properties in the steady-state photocarriergrating experiment Material Research SocietySemiconductor Physics2004  زيارة الرابط
Exploitation of the electric-field dependence of photocarrier properties by application ofthe steady-state photocarrier grating technique Proceeding of nineteenth international European photovoltaic solar energySemiconductor Physics2004  زيارة الرابط
Further Study and Analysis of the 7Li on 56Fe Reaction at 50 MeV Incident Energy Acta Physica Hungarica A) Heavy Ion Physics Nuclear Physics2004  زيارة الرابط
A Study of Semi-Classical Processes in the Elastic Scattering of 32S by 64Ni and 58Ni by 27AlActa Physica Hungarica: New Series: Heavy Ion PhysicsNuclear physics2003  زيارة الرابط
Analysis and modelling of generation?recombination noise in amorphous semiconductorsThin Solid FilmsAmorphous Semiconductors2003  زيارة الرابط
Further Investigation on the transfer reaction 7Li on 56 Fe at 50MeV incident energyProceedings of the international conference on mathematics, nuclear physics and applications in the 21st centuryNuclear Physics2003  زيارة الرابط
Further analysis on the Jahn-Teller V3+ center in the hosts GaAs, and In P under the effect of spin-orbit coupling and uniaxial stressMutah Lil_Buhuth Wad-Dirasat Semiconductor Physics2003  زيارة الرابط
AN ANALYSIS OF 16O + 64Zn ELASTIC SCATTERING DATA USING THE McINTYREThe Arabian Journal for Science and Engineering,Nuclear reactions2002  زيارة الرابط
Monte-Carlo Simulation of Generation- Recombination Noise in Amorphous SemiconductorsMRSAmorphous Semiconductors2002  زيارة الرابط
Complete and incomplete fusion in reactions of 7Li + 56Fe at E(7Li) = 50 and 68 MeV from analysis of recoil range and light-particle measurementsThe European Physical Journal A - Hadrons and NucleiNuclear fusion2001  زيارة الرابط
Generation- Recombination Noise in Amorphous SemiconductorsMRSAmorphous Semiconductors2001  زيارة الرابط
High resolution density of states spectroscopy in semiconductors by exact post-transit current analysis Journal of Applied PhysicsAmorphous Semiconductors2000  زيارة الرابط
Improved High Resolution Post-Transit Spectroscopy for Determining the Density of States in Amorphous SemiconductorsMRSAmorphous Semiconductors2000  زيارة الرابط
New developments in the determination of the density of states from Transient photocurrents in disordered semiconductorsProceedings of the Eleventh International School on Condensed Matter PhysicsSemiconductor Physics2000  زيارة الرابط
A theoretical study for the excited 3T2 vibronic state of the V3+ ion in GaP: V: S under uniaxial stresses.Muta Journal for Research and StudiesSemiconductor Physics1997  زيارة الرابط
Strong absorption formalism applied to the direct transfer reaction 56Fe(7L,4He)Co* leading to continuum states Journal of Physics G: Nuclear and Particle PhysicsNuclear transfer Reactions1996  زيارة الرابط
First and second-order reduction factors for E X e Jahn-Teller systemJournal of Physics: Condensed MatterSemiconductor Physics1993  زيارة الرابط
An Analysis of the strongly coupled E ? e Jahn-Teller system: Anisotropy and inversion splittingJournal of Physics: Condensed Matter Semiconductor Physics1991  زيارة الرابط
An Analysis of the strongly coupled E x e Jahn-Teller system: Anisotropy and inversion splittingJournal of Physics: Condensed MatterSemiconductor Physics1991  زيارة الرابط
The transformation method applied to the E x e Jahn-Teller system".Condensed Matter and Materials Physics Conference Semiconductor Physics1991  زيارة الرابط