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Publications *
1. Fabrication of Heterojunction Diode Based on n-ZnO Nanowires /p-Si Substrate: Temperature Dependent Transport Characteristics.
Journal of Nanoscience and Nanotechnology, 16, 1-7 (2016) (in press)
R. I. Badran and A. Umar
2. An Analysis of Heavy-Ion Elastic Scattering Processes Using Numerical Model Based on the Partial-
Wave Parametrised S-Matrix with Regge Pole Factor.
Brazilian Journal of Physics, 46, 341-354 (2016).
R. I. Badran and I. H. Al-Lehyani
3. Temperature-Dependent Electrical Properties of Sn-Doped ZnO Nanowires.
Science of Advanced Materials, 7, (2015) 2684-2691
S. H. Al-Heniti, R. I. Badran and A. Umar
4. Regge Pole Analysis of Elastic Scattering of ? Particles by Even Isotopes of Ni Target at Incident
Energies Above Coulomb Barrier.
International Journal of Modern Physics E, 24, 1550082-23 (2015)
R. I. Badran, A. I. Istaiti, W. N. Mashaqbeh, I. H. Al-Lehyani
5. Synthesis and Properties of Aligned ZnO Nanorods on Si Substrate and Their Applications for p-Si/
n-ZnO Heterojunction Diode.
Journal of Nanoelectronics and Optoelectronics, 10, 688–693 (2015)
S. H. Kim, A. Umar, R. I. Badran, H. Algarni
6. Fabrication and Characterization of n-ZnO Hexagonal Nanorods/p-Si Heterojunction
Diodes:Temperature-Dependant Electrical Characteristics.
Journal of Nanotechnology and Nanoscience, 15, 4969-4975 (2015)
A. Umar, R. I. Badran, A. Al-Hajry, S. Al-Heniti
7. Nanocrystalline and amorphous silicon as competing candidates for PV application.
Journal of Material Science and Technology Research, 1, (2014)
R. I. Badran
8. Growth and Properties of Sn-Doped ZnO Nanowires for Heterojunction Diode Application
Science of Advanced Materials 6, 1993-2000 (2014)
S. H. Al-Heniti, R. I. Badran, A. Umar, and H. M. Zaki
9. Synthesis and Characterization of Iron Oxide Nanoparticles for Phenyl Hydrazine Sensor
Applications
Sensor Letters 12 (2014) 97-101
S. W. Hwang, A. Umar, G. N. Dar, S. H. Kim, and R. I. Badran
10. Exploring Diffractive Features of Elastic Scattering of 6Li on Different Nuclei at
Different Energies.
Canadian Journal of Physics, 91 (2013) 355-364
R. I. Badran and D. Al-Masri
11. Analysis of Diffractive Features in Elastic Scattering of 7Li by Different Target Nuclei
at Different Energies. AIP Conference Proceedings 1569, 81 (2013)
R. I. Badran and Dana Al-Masri
12. n-ZnO Based Nanostructure/p-Silicon Substrate Based Efficient p-n Heterojunction Diode
Science of Advanced Materials, 5, (2013) 301-307
S. Al-Heniti, A. Umar, R. I. Badran, H. M. Zaki, A. Al-Hajry
13. Electrical properties of solution processed p-SnS nanosheet/n-TiO2 heterostructure assembly"
Applied Physics Letters 103, (2013) 101602
A. Umar, M. S. Akhtar, R. I. Badran, M. Abaker, S. H. Kim, A. Al-Hajry, S. Baskoutas
14. Temperature Dependent Structural and Electrical Properties of ZnO Nanowire Networks.
Journal of nanotechnology and nanoscience,12 (2012), 68-74.
S. Al-Heniti, R. I. Badran, A. Umar, A. Al-Ghamdi, S. H. Kim, F. Al-Marzouki, A. Al-
Hajry, S. A. Al-Sayari, and T. Al-Harbi
15. The Effect of Power Density on Diffusion Length and Energy Gap of a-Si:H and nc Si:H Thin
Films Prepared by Plasma Enhanced Chemical Vapor Deposition Technique.
Acta Physica Polonica A, 122 (2012) 576-581.
R. I. Badran, H. Al-Amodi, S.Yaghmour , S. H. Shaklan , R. Bruggemann, X. Han and S. Xiong
16. Electrical Properties of p-Si/ n-ZnO Nanowires Heterojunction Devices,
Advanced Materials Letters, 4 (2010) 24-28
S. Alhiniti, R. I. Badran, A. A. Al-Ghamdi, F. Al-Aqel
17. Synthesis and characterization of hexagonal zinc oxide nanorods on silicon for the
fabrication of p-Si/ n-ZnO heterojunction devices.
Journal of alloys and compounds 508 (2010) 375-379
R. I. Badran, A. Umar, S. Alhiniti, T. Al-Harbi
18. Strong absorption analysis of the elastic scattering of light heavy ions using McIntyr and
Frahn-Venter models.
International Journal of Modern Physics E 19 (2010) 2199.
R. I. Badran, H. Badehdah, R. Khalidi and M. Arafah
19. The effect of Helium Dilution on Optical and Photoelectric Properties of a-Si: H Thin Films
Prepared by Plasma Enhanced Chemical Vapor Deposition Technique.
The Arabian Journal for Science and Engineering (AJSE), (2012) 183-195
R. I. Badran.
20. Monte-Carlo Simulation of the space charge limited time of flight photocurrent in
a-Si:H p-i-n photo-cell.
Submitted to J. Phys.: Conden. Mat. (2011)
N. Ouhbab, A. Merazga, M. Lerda, R. I. Badran
21. Phenomenological analysis of elastic scattering reactions using different models.
Brazilian Journal of Physics, 39, (2009) 684-693.
R. I. Badran and H. Badehdah
22. Minority carrier properties of microcrystalline Ge:H thin films.
J. Optoelectro. Adv. Mat 11( 2009).
R.I. Badran, R. BrĂĽggemann and R. Carius.
23. A study of optical properties of hydrogenated microcrystalline silicon films prepared
by plasma enhanced chemical vapor deposition technique at different conditions of
excited power and pressure.
Vacuum 83 (2009) 1023-1030.
R. I. Badran, F. S. Al-Hazmi, S. Al-Heniti, A. Al-Ghamdi, J. Li and S. Xiong
24. The influence of change in silane concentration and substrate temperature on
optical properties of hydrogenated microcrystalline silicon films.
J. Optoelectro. Adv. Mat, 5 (2009) 635-643
R.I. Badran, S. Al-Heniti, F. S. Al-Hazmi, A. Al-Ghamdi, J. Li and S. Xiong
25. A study of field dependent steady-state photocarrier grating measurements for
microcrystalline semiconductors using different theoretical methods.
J. Optoelectro. Adv. Mat. 10, 1 (2008) pp. 174-184.
R. I. Badran
26. Estimations of carrier mobility and trapped-carrier density of states for
microcrystalline semiconductors from analysis of field dependent steady-state
photocarrier grating technique. AIP, first international conference on nanotechnology and
its applications, AIP, vol. 929 (2007) pp. 201-205
R. I. Badran
27. Relation between dark and photoelectronic properties of microcrystalline
silicon.
J. Optoelectro. Adv. Mat. 9, 2 (2007).
R. Bruggemann, R. I. Badran, and S. Xiong
28. Analysis of field dependent steady-state photocarrier measurements for
polymorphous and microcrystalline semiconductors.
J. Mat. Sci.: Materials in Electronics 18, 4, 405-414 (2007).
R. I. Badran
29. On electronic properties from the application of field dependence SSPG
approaches to polymorphous and microcrystalline silicon semiconductors.
J. Optoelectro. Adv. Mat. 8, 3 (2006)
R. I. Badran and N. AL-Awwad.
30. Electric-field dependence of photocarrier properties in the steady-state photocarrier
grating experiment.
MRS Vol. 808 (2004) A9.7.1.
R. Bruggemann and R. I. Badran.
31. Exploitation of the electric-field dependence of photocarrier properties by application
of the steady-state photocarrier grating technique.
Proceeding of the nineteenth international European photovoltaic solar energy
conference, 7-11 June (2004) 1505.
R. I. Badran and R. Bruggemann.
32. Further study and analysis of the 7Li on 56Fe reaction at 50 MeV incident energy.
Acta Physica -Heavy Ions Physics A 21/1 (2004).
R. I. Badran.
33. Analysis and modeling of generation- recombination noise in amorphous
semiconductors.
Thin Solid Films 427 (2003).
R. I. Badran, C. Main and S. Reynolds.
34. A study of semi-classical processes in the elastic scattering of 32S by 64Ni and58Ni by
27Al.
Acta Physica N.S-Heavy Ions Physics A 17/1 (2003).
R. I. Badran.
35. Further Investigation on the transfer reaction 7Li on 56 Fe at 50MeV incident energy.
Proceedings of the international conference on mathematics, nuclear
physics and applications in the 21st century, Cairo 8-13 March (2003) 91.
R. I. Badran
36. Further analysis on the Jahn-Teller V3+ center in the hosts GaAs, and In P under the
effect of spin-orbit coupling and uniaxial stress.
Mu'tah Lil_Buhuth Wad-Dirasat vol. 18 (2003)
R. I. Badran.
37. Monte-Carlo simulation of generation- recombination noise in amorphous
semiconductors.
M R S Vol. 715, A2.2.1 (2002).
R. I. Badran, C. Main and S. Reynolds.
38. An analysis of 16O + 64Zn elastic scattering data using the McIntyre Parameterization
of the scattering matrix.
The Arabian Journal for Science and Engineering (AJSE), A1, 65-73 (2002).
R. I. Badran
39. Generation- recombination noise in amorphous semiconductors.
M R S Vol. 669, A23.7 (2001).
C. Main, S. Reynolds and R. I. Badran.
40. Complete and incomplete fusion in reactions of 7Li + 56Fe at E (7Li) = 50 and 68 MeV
from analysis of recoil range light particle measurements.
European Physical Journal A 12, 317-325 (2001).
R. I. Badran, D. J. Parker and I. M. Naqib.
41. Improved high-resolution post-transit spectroscopy for determining the density of states
in amorphous semiconductors.
MRS Vol. 609 (2000)
C. Main, S. Reynolds, R. I. Badran, J. M. Marshall.
42. New developments in the determination of the density of states from
Transient photocurrents in disordered semiconductors.
Proceedings of the Eleventh International School on Condensed Matter Physics
(ISCMP), Varna, Bulgaria Sept. 3-8 (2000).
C. Main, S. Reynolds, M. Gueorguieva and R. I. Badran.
43. High resolution density of states spectroscopy in semiconductors by exact post-transit current
analysis.
J. Appl. Phys. 88, 1190-1192, (2000)
C. Main, S. Reynolds, R. I. Badran and J. M. Marshall
44. A theoretical study for the excited 3T2 vibronic state of the V3+ ion in GaP: V: S under uniaxial
stresses.
Mu'ta Journal for Research and Studies Vol. 12, No. 3, (1997).
R. I. Badran
45. Strong absorption formalism applied to the direct transfer reaction 56Fe (7Li, 4He) 59Co* leading to
continuum states"
Journal of Physics G: Nuclear and Particle Physics 22 1441 (1996)
R. I. Badran, I M Naqib, D J Parker and J Asher
46. First and second-order reduction factors for E ? e Jahn-Teller system.
J. Phys.: Condens. Matter 5, 1505-1816, (1993)
R. I. Badran, S. Jamila, P. J. Kirk, C. A. Bates and J. L. Dunn.
47. An Analysis of the strongly coupled E ? e Jahn-Teller system: Anisotropy and inversion
splitting.
J. Phys.:Condens. Matter 3, 6329-6343, (1991)
R.I. Badran, C. A. Bates
POSTERS AND CONFERENCES:
48. Nanocrystalline and amorphous silicon as competing candidates for PV applications, 2nd
international meeting on materials in electronics applications, held on 8-10 May 2009,
Hammamet, Tunisia.(Oral presentation)
R.I. Badran .F. Al-Hazmi, M. S. Al-Ahmadi
49. Fabrication and characterization of quasi aligned n-ZnO nanowires on p-Silicon Substrate for
heterojunction diode application, Kuwait International Nanotechnology Conference and Exhibitions
held on 9-11th Feb. 2016, in Kuwait- city, Kuwait.(Oral presentation)
R. I. Badran, A. Umar, S. Al-Heniti, S. H. Kim
50. Fabrication of highly-sensitive cholesterol biosensor bases on Bi2O2CO3 nanoplates, Kuwait
International Nanotechnology Conference and Exhibitions held on 9-11th Feb. 2016, in city-Kuwait,
Kuwait.
A. Umar, A. A. Ibrahim, Ali Bumajdad, S. Baskoutas, Sang Hoon Kim, R. I. Badran
51. CdO-ZnO hexagonal nanocones: Efficient materials for photovoltaic and sensing applications,
Kuwait International Nanotechnology Conference and Exhibitions held on 9-11th Feb. 2016,
in Kuwait city-Kuwait.
A. Umar, M. S. Akhtar, Ali Bumajdad, Sang Hoon Kim, R. I. Badran
52. Development of highly-sensitive and selective ethanol sensor based on lance-shaped CuO
nanostructures, Kuwait International Nanotechnology Conference and Exhibitions held on 9-11th Feb.
2016, in Kuwait city-Kuwait.
A.Umar, J-H Lee, A.A. Ibrahim, S. Baskoutas, Sang Hoon Kim, R. I. Badran
53. Analysis of Diffractive Features in Elastic Scattering of 7Li by Different Target Nuclei at Different
Energies,3rd international advances in applied physics and materials science, held on 24-28th April
Antalya, Turkey. (Oral presentation)
R. I. Badran
54. A Study of Optical Properties of Nanocrystalline silicon for Photovoltaic Applications, 2nd international
meeting on materials in electronics applications, held on 8-10 May 2009, Hammamet, Tunisia.(Oral
presentation)
R. I. Badran, F. S. Al-Hazmi, M. S. Al-Ahmadi
55. Investigation of Optical Properties of Hydrogenated Microcrystalline Silicon”, The 6th International
Materials Technology Conference and Exhibition (IMTCE 2008), held at Institute of Materials,
Kula Lumpur, Malaysia, 24-27 August 2008. (Oral Presentation)
R.I. Badran, F. S. Al-Hazmi, S. Al-Heniti, A. Al-Ghamdi, Y. Li and S. Xiong
56. Estimations of carrier mobility and trapped-carrier density of states for microcrystalline
silicon semiconductors from analysis of field dependent steady-state photcarrier
grating measurements, The First International Nanotechnology Conference, held at American
University of Sharjah, Sharjah April 10-12, 2007.
R. I. Badran
57. A theoretical study of elastic scattering reactions based on the diffraction model, Third
Saudi Science Conference (New Horizons in Science and their Applications) held at
King Saud University, Riyadh, March 10-13, 2007.
R. I. Badran, R. Khaldi
58. Trapped-carrier density of states for microcrystalline and polymorphous semiconductors
from measurements and theory of field dependence SSPG techniques, The First Workshop on
Renewable Energy Resources held at the Hashemite University in collaboration with Goethe
Institute-Amman, Nov. 8-11, 2005.
R. I. Badran
59. Exploitation of the electric-field dependence of photocarrier properties by application of the
steady-state photocarrier grating technique, 19th European Photovoltaic Solar Energy
Conference and Exhibition, held at Paris, June 7-11, 2004.
R. I. Badran and R. Bruggemann.
60. Electric-field dependence of photocarrier properties in the steady-state photocarrier grating
experiment. MRS meeting held at San Francisco, April 12-18, 2004.
R. Bruggemann and R. I. Badran.
61. Further Investigation on the transfer reaction 7Li on 56 Fe at 50MeV incident energy. First
International Conference of Mathematics and Nuclear Physics, April 2003, Cairo Egypt.
(Oral Presentation)
R. I. Badran.
62. Generation-recombination noise on amorphous semiconductors.
CHELSEA Amorphous and Organic Semiconductors Meeting, Imperial College Science,
Technology and Medicine, London, April 5-6 (2001).
Main C., Reynolds S., R. I. Badran.
63. Improved high-resolution post-transit spectroscopy for determining the density of states in
amorphous semiconductors.
IOP European Workshop on Novel Photovoltaic Materials, University of Bath,
July (2000). (Oral presentation)
Main C., Reynolds S., R. I. Badran, and Marshall J. M.
64. High resolution post-transit current analysis for high resolution density of states
spectroscopy in semiconductors.
UK Annual Conference on Amorphous and Organic Semiconductors, University of London,
April (2000). (Oral Presentation)
Main C., Reynolds S., R. I. Badran, and Marshall J. M.
65. Further analysis on the interband transitions of V3+ ions in GaAs and InP hosts
under uniaxial stresses. The First Conference on Physics and Condensed Matter,
Mu'ta University, May (1997).(Oral Presentation)
R. I. Badran.
66. Dynamical Jahn-Teller effects in the excited 3T1 and 3T2 states of V3+ ion in III-V
semiconductors.
Third Conference on Physics of Condensed Matter, Jordan University, 17-21 April (1994).
R. I. Badran.
67. The transformation method applied to the E x e Jahn-Teller system.
Condensed Matter and Materials Physics Conference (CMMP) 17-19 Dec. (1991),
International Convention Center- Birmingham- UK.
R. I. Badran and C. A. Bates.
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