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Research Interests

1. The studies of photoelectrical and optical properties of amorphous and nanocrystalline thin films semiconductor using the Steady-State Photocarrier Grating (SSPG) technique and sepectrophotometry. This includes a specific study of the minority carrier properties and the optical constants. The experimental studies are accompanied with the implementation of different theoretical approaches. Furthermore, the study of electrical properties of ZnO nanowires, nanorods and nanosheets fabricated as heterojunction diodes, is another interest.
2. The study of electrical properties of semiconductors, via the transient photoconductivity (TPC) and the modulated photoconductivity (MPC) on nanocrystlline and amorphous semiconductors samples is conducted where the numerical methods of Fourier and Laplace transforms are used to determine the density of states in the mobility gap.
3. The analysis of noise in semiconductor devices is also conducted. The analysis of generation-recombination noise in amorphous semiconductor devices based on multiple-trapping-state regime using the equivalent circuit model of Chaplin is the main theme of this work. The spectral noise is calculated and compared to the theoretical results of other models. Monte-Carlo simulation programs are also developed to calculate the spectral noise and these results are compared to the above mentioned theoretical results and experimental data.
4. Research work in nuclear physics involving heavy ion collisions is of one of my interests. The first part of this research deals with the analysis of elastic scattering of heavy nuclei at low energies. While the second part involves the incomplete fusion, and transfer reactions of different heavy nuclei at various energies. Different numerical models are developed and employed in this theoretical work.
5. The theoretical studies of the transition metal ions as impurities in the crystalline group III-V semiconductors is the main theme of my research work in solid state physics. The analytical method of unitary transformation followed by an energy minimization is used to study the E? e Jahn-Teller system in the strong coupling limit. The inversion splitting and reduction factors are obtained analytically. The Schr?dinger equation is solved for this complex system and the perturbation theory is used. This work also involves the modeling of the transition metal ion V3+ as impurity in the GaAs, GaP and InP semiconductors. In particular, the analysis of the structure of the zero-phonon lines of transitions within V3+ ions, in the above-mentioned hosts, under the effects of spin-orbit coupling, uniaxial stress and external magnetic field which are accompanied by Jahn-Teller effects, are studied.