About Me

More About Me

Name : Rashad. I. B. Badran
Rank : Professor
Office : 204
Phone : 4203
E-Mail : rbadran@hu.edu..jo
Major : Physics of Microcrystalline and/or Nanocrystalline Semiconductors



Curriculum Vitae

Welcome Message

 

 


Announcements & Shortcuts

Announcements,Important Links and Shortcuts services



Announcements

 

Publications                                                                                                       *                

1.   Fabrication of Heterojunction Diode Based on n-ZnO Nanowires /p-Si Substrate: Temperature Dependent Transport Characteristics.

Journal of Nanoscience and Nanotechnology, 16, 1-7 (2016) (in press)

R. I. Badran and A. Umar

 

2.   An Analysis of Heavy-Ion Elastic Scattering Processes Using Numerical Model Based on the Partial-

   Wave Parametrised S-Matrix with Regge Pole Factor.

   Brazilian Journal of Physics, 46, 341-354 (2016).

   R. I. Badran and I. H. Al-Lehyani

 

3.  Temperature-Dependent Electrical Properties of Sn-Doped ZnO Nanowires.

    Science of Advanced Materials, 7, (2015) 2684-2691

    S. H. Al-Heniti, R. I. Badran and A. Umar

 

4.  Regge Pole Analysis of  Elastic Scattering of ? Particles by Even Isotopes of Ni Target at Incident  

    Energies Above Coulomb Barrier.

    International Journal of Modern Physics E, 24, 1550082-23 (2015)

    R. I. Badran, A. I. Istaiti, W. N. Mashaqbeh, I. H. Al-Lehyani

 

5.    Synthesis and Properties of Aligned ZnO Nanorods on Si Substrate and Their Applications for p-Si/

    n-ZnO Heterojunction Diode.

    Journal of Nanoelectronics and Optoelectronics, 10, 688–693 (2015)

    S. H. Kim, A. Umar, R. I. Badran, H. Algarni

 

6.   Fabrication and Characterization of n-ZnO Hexagonal Nanorods/p-Si Heterojunction 

   Diodes:Temperature-Dependant Electrical Characteristics.

   Journal of Nanotechnology and Nanoscience, 15, 4969-4975 (2015)

   A. Umar, R. I. Badran, A. Al-Hajry, S. Al-Heniti

 

7.  Nanocrystalline and amorphous silicon as competing candidates for PV application.

    Journal of Material Science and Technology Research, 1, (2014)

    R. I. Badran

 

8.  Growth and Properties of Sn-Doped ZnO Nanowires for Heterojunction Diode Application

    Science of Advanced Materials 6, 1993-2000 (2014)

    S. H. Al-Heniti, R. I. Badran, A. Umar, and H. M. Zaki

 

9.   Synthesis and Characterization of Iron Oxide Nanoparticles for Phenyl Hydrazine Sensor

    Applications

    Sensor Letters 12 (2014) 97-101

    S. W. Hwang, A. Umar, G. N. Dar, S. H. Kim, and R. I. Badran

 

10.  Exploring Diffractive Features of Elastic Scattering of 6Li on Different Nuclei at

    Different Energies.

      Canadian Journal of Physics, 91 (2013) 355-364

      R. I. Badran and D. Al-Masri

 

11.   Analysis of Diffractive Features in Elastic Scattering of 7Li by Different Target Nuclei

        at Different Energies. AIP Conference Proceedings 1569, 81 (2013)

   R. I. Badran and Dana Al-Masri

 

12.   n-ZnO Based Nanostructure/p-Silicon Substrate Based Efficient p-n Heterojunction Diode

     Science of Advanced Materials, 5, (2013) 301-307

     S. Al-Heniti, A. Umar, R. I. Badran, H. M. Zaki, A. Al-Hajry

 

13.  Electrical properties of solution processed p-SnS nanosheet/n-TiO2 heterostructure assembly"

     Applied Physics Letters 103, (2013) 101602

    A. Umar, M. S. Akhtar, R. I. Badran, M. Abaker, S. H. Kim, A. Al-Hajry, S. Baskoutas

14.   Temperature Dependent Structural and Electrical Properties of ZnO Nanowire Networks.

           Journal of nanotechnology and nanoscience,12 (2012), 68-74.

            S. Al-Heniti, R. I. Badran, A. Umar, A. Al-Ghamdi, S. H. Kim, F. Al-Marzouki, A. Al-

            Hajry, S. A. Al-Sayari, and T. Al-Harbi

 

      15.  The Effect of Power Density on Diffusion Length and Energy Gap of a-Si:H and nc Si:H Thin

           Films Prepared by Plasma Enhanced Chemical Vapor Deposition Technique.

              Acta Physica Polonica A, 122 (2012) 576-581.

          R. I. Badran, H. Al-Amodi, S.Yaghmour ,  S. H. Shaklan ,  R. Bruggemann, X. Han and S. Xiong

        16.    Electrical Properties of p-Si/ n-ZnO Nanowires Heterojunction Devices,

           Advanced Materials Letters, 4 (2010) 24-28

           S. Alhiniti, R. I. Badran, A. A. Al-Ghamdi, F. Al-Aqel

 

          17Synthesis and characterization of hexagonal zinc oxide nanorods on silicon for the

           fabrication of p-Si/ n-ZnO heterojunction devices.

           Journal of alloys and compounds 508 (2010) 375-379

              R. I. Badran, A. Umar, S. Alhiniti, T. Al-Harbi

 

       18.   Strong absorption analysis of the elastic scattering of light heavy ions using McIntyr and    

           Frahn-Venter models.

           International Journal of Modern Physics E 19 (2010) 2199.

           R. I. Badran, H. Badehdah, R. Khalidi and M. Arafah

 

        19.   The effect of Helium Dilution on Optical and Photoelectric Properties of a-Si: H Thin Films

           Prepared by Plasma Enhanced Chemical Vapor Deposition Technique.

           The Arabian Journal for Science and Engineering (AJSE), (2012) 183-195

           R. I. Badran.

 

       20.    Monte-Carlo Simulation of the space charge limited time of flight photocurrent in

           a-Si:H p-i-n photo-cell.

           Submitted to J. Phys.: Conden. Mat. (2011)

           N. Ouhbab, A. Merazga, M. Lerda, R. I. Badran

 

         21. Phenomenological analysis of elastic scattering reactions using different  models.

           Brazilian Journal of Physics, 39, (2009) 684-693.

           R. I. Badran and H. Badehdah

 

         22. Minority carrier properties of microcrystalline Ge:H thin films.

           J. Optoelectro. Adv. Mat 11( 2009).

           R.I. Badran, R. Brüggemann and R. Carius.

 

         23. A study of optical properties of hydrogenated microcrystalline silicon films  prepared

           by plasma enhanced chemical vapor deposition technique at different conditions of 

           excited power and pressure.

           Vacuum 83 (2009) 1023-1030.

           R. I. Badran, F. S. Al-Hazmi, S. Al-Heniti, A. Al-Ghamdi, J. Li and S. Xiong

 

         24. The influence of change in silane concentration and substrate temperature on

            optical properties of hydrogenated microcrystalline silicon films.

            J. Optoelectro. Adv. Mat, 5 (2009) 635-643

            R.I. Badran, S. Al-Heniti, F. S. Al-Hazmi, A. Al-Ghamdi, J. Li and S. Xiong

 

          25. A study of field dependent steady-state photocarrier grating measurements for

            microcrystalline semiconductors using different theoretical methods.

            J. Optoelectro. Adv. Mat. 10, 1 (2008) pp. 174-184.

            R. I. Badran

 

         26.  Estimations of carrier mobility and trapped-carrier density of states for

            microcrystalline semiconductors from analysis of field dependent steady-state  

            photocarrier  grating technique. AIP, first international conference on nanotechnology and    

            its applications, AIP, vol. 929 (2007) pp. 201-205

            R. I. Badran

 

         27.  Relation between dark and photoelectronic properties of microcrystalline

            silicon.

            J. Optoelectro. Adv. Mat. 9, 2 (2007).

            R. Bruggemann, R. I. Badran, and S. Xiong

 

         28.  Analysis of field dependent steady-state photocarrier measurements for

            polymorphous and microcrystalline semiconductors.

            J. Mat. Sci.: Materials in Electronics 18, 4, 405-414 (2007).

            R. I. Badran

 

         29.  On electronic properties from the application of field dependence SSPG

            approaches to polymorphous and microcrystalline silicon semiconductors.

            J. Optoelectro. Adv. Mat. 8, 3 (2006)

            R. I. Badran and N. AL-Awwad.

 

         30.  Electric-field dependence of photocarrier properties in the steady-state photocarrier

            grating experiment.

            MRS Vol. 808 (2004) A9.7.1.

            R. Bruggemann and R. I. Badran.

 

       31.  Exploitation of the electric-field dependence of photocarrier properties by application

            of the steady-state photocarrier grating technique.

            Proceeding of the nineteenth international European photovoltaic solar energy

            conference, 7-11 June (2004) 1505.

            R. I. Badran and R. Bruggemann.

 

       32.  Further study and analysis of the 7Li on 56Fe reaction at 50 MeV incident energy.

            Acta Physica -Heavy Ions Physics A 21/1 (2004).

            R. I. Badran.

 

       33.  Analysis and modeling of generation- recombination noise in amorphous

            semiconductors.

            Thin Solid Films 427 (2003).

            R. I. Badran, C. Main and S. Reynolds.

 

       34.  A study of semi-classical processes in the elastic scattering of 32S by 64Ni and58Ni by

             27Al.

            Acta Physica N.S-Heavy Ions Physics A 17/1 (2003).

            R. I. Badran.

 

         35. Further Investigation on the transfer reaction 7Li on  56 Fe at 50MeV incident energy.

           Proceedings of the international conference on mathematics, nuclear

     physics  and  applications in the 21st century, Cairo 8-13 March (2003) 91.

           R. I. Badran 

 

       36. Further analysis on the Jahn-Teller V3+ center in the hosts GaAs, and In P under the

            effect of spin-orbit coupling and uniaxial stress.

            Mu'tah Lil_Buhuth Wad-Dirasat vol. 18 (2003)

            R. I. Badran.

 

        37.  Monte-Carlo simulation of generation- recombination noise in amorphous

            semiconductors.

            M R S Vol. 715, A2.2.1 (2002).

            R. I. Badran, C. Main and S. Reynolds.

 

        38.  An analysis of 16O + 64Zn elastic scattering data using the McIntyre Parameterization

            of the scattering matrix.

            The Arabian Journal for Science and Engineering (AJSE), A1, 65-73 (2002).

            R. I. Badran

 

         39.  Generation- recombination noise in amorphous semiconductors.

            M R S Vol. 669, A23.7 (2001).

            C. Main, S. Reynolds and R. I. Badran.

 

         40.  Complete and incomplete fusion in reactions of 7Li + 56Fe at E (7Li) = 50 and 68 MeV

            from analysis of recoil range light particle measurements.

            European Physical Journal A 12, 317-325 (2001).

            R. I. Badran, D. J.  Parker and I. M. Naqib.

 

       41.  Improved high-resolution post-transit spectroscopy for determining the density of states

            in amorphous semiconductors.

            MRS Vol. 609 (2000)

            C. Main, S. Reynolds, R. I. Badran, J. M. Marshall.

 

         42.  New developments in the determination of the density of states from

            Transient photocurrents in disordered semiconductors.

             Proceedings of the Eleventh International School on Condensed Matter Physics

             (ISCMP), Varna, Bulgaria Sept. 3-8 (2000).

             C. Main, S. Reynolds, M. Gueorguieva and R. I. Badran.

 

         43.   High resolution density of states spectroscopy in semiconductors by exact post-transit current

             analysis.

             J. Appl. Phys. 88, 1190-1192, (2000)

             C. Main, S. Reynolds, R. I. Badran and J. M. Marshall

 

         44.  A theoretical study for the excited 3T2 vibronic state of the V3+ ion in GaP: V: S under uniaxial

            stresses.

            Mu'ta Journal for Research and Studies Vol. 12, No. 3, (1997).

            R. I. Badran

 

         45.  Strong absorption formalism applied to the direct transfer reaction 56Fe (7Li, 4He) 59Co* leading to

            continuum states"

     Journal of Physics G: Nuclear and Particle Physics 22 1441 (1996)

      R. I. Badran, I M Naqib, D J Parker and J Asher

 

               46. First and second-order reduction factors for E ? e Jahn-Teller system.

            J. Phys.: Condens. Matter 5, 1505-1816, (1993)

            R. I. Badran, S. Jamila, P. J. Kirk, C. A. Bates and J. L. Dunn.

 

         47.  An Analysis of the strongly coupled E ? e Jahn-Teller system: Anisotropy and inversion   

            splitting.

            J. Phys.:Condens. Matter 3, 6329-6343, (1991)

            R.I. Badran, C. A. Bates

       POSTERS AND CONFERENCES:

         48.  Nanocrystalline and amorphous silicon as competing candidates for PV applications, 2nd     

            international meeting on materials in electronics applications, held on 8-10 May 2009,

            Hammamet, Tunisia.(Oral presentation)

      R.I. Badran .F. Al-Hazmi, M. S. Al-Ahmadi

 

 49. Fabrication and characterization of quasi aligned n-ZnO nanowires on p-Silicon Substrate for

   heterojunction diode application, Kuwait International Nanotechnology Conference and Exhibitions

   held on 9-11th Feb. 2016, in Kuwait- city, Kuwait.(Oral presentation)

   R. I. Badran, A. Umar, S. Al-Heniti, S. H. Kim

 

 50.  Fabrication of highly-sensitive cholesterol biosensor bases on Bi2O2CO3 nanoplates, Kuwait

    International Nanotechnology Conference and Exhibitions held on 9-11th Feb. 2016, in city-Kuwait,

    Kuwait.

    A. Umar, A. A. Ibrahim, Ali Bumajdad, S. Baskoutas, Sang Hoon Kim, R. I. Badran

  51.  CdO-ZnO hexagonal nanocones: Efficient materials for photovoltaic and sensing applications,

      Kuwait International Nanotechnology Conference and Exhibitions held on 9-11th Feb. 2016,

      in Kuwait city-Kuwait.

     A. Umar, M. S. Akhtar, Ali Bumajdad, Sang Hoon Kim, R. I. Badran

 52.  Development of highly-sensitive and selective ethanol sensor based on lance-shaped CuO

     nanostructures, Kuwait International Nanotechnology Conference and Exhibitions held on 9-11th Feb.

     2016, in Kuwait city-Kuwait.

     A.Umar, J-H Lee, A.A. Ibrahim, S. Baskoutas, Sang Hoon Kim, R. I. Badran

  53. Analysis of Diffractive Features in Elastic Scattering of 7Li by Different Target Nuclei at Different

     Energies,3rd international advances in applied physics and materials science, held on 24-28th April

     Antalya, Turkey. (Oral presentation)

     R. I. Badran

 54.  A Study of Optical Properties of Nanocrystalline silicon for Photovoltaic Applications, 2nd international 

      meeting on materials in electronics applications, held on 8-10 May 2009, Hammamet, Tunisia.(Oral

      presentation)

      R. I. Badran, F. S. Al-Hazmi, M. S. Al-Ahmadi

 55. Investigation of Optical Properties of Hydrogenated Microcrystalline Silicon”, The 6th International

      Materials Technology Conference and Exhibition (IMTCE 2008), held at Institute of Materials,

      Kula Lumpur, Malaysia, 24-27 August 2008. (Oral Presentation)

      R.I. Badran, F. S. Al-Hazmi, S. Al-Heniti, A. Al-Ghamdi, Y. Li and S. Xiong

 56.  Estimations of carrier mobility and trapped-carrier density of states for microcrystalline

      silicon semiconductors from analysis of field dependent steady-state photcarrier 

      grating measurements, The First International Nanotechnology Conference, held at American

      University of Sharjah, Sharjah April 10-12, 2007.

      R. I. Badran

 

 57.  A theoretical study of elastic scattering reactions based on the diffraction model, Third 

      Saudi Science Conference (New Horizons in Science and their Applications) held at 

      King Saud University, Riyadh, March 10-13, 2007.

      R. I. Badran, R. Khaldi

 

 58.  Trapped-carrier density of states for microcrystalline and polymorphous semiconductors

      from measurements and theory of field dependence SSPG techniques, The First Workshop on

      Renewable Energy Resources held at the Hashemite University in collaboration with Goethe

      Institute-Amman, Nov. 8-11, 2005.

      R. I. Badran

 

 59.  Exploitation of the electric-field dependence of photocarrier properties by application of the

      steady-state photocarrier grating technique, 19th European Photovoltaic Solar Energy

      Conference and Exhibition, held at Paris, June 7-11, 2004.

      R. I. Badran and R. Bruggemann.

 

 60.  Electric-field dependence of photocarrier properties in the steady-state photocarrier grating

      experiment. MRS meeting held at San Francisco, April 12-18, 2004.

      R. Bruggemann and R. I. Badran.

 

 61.  Further Investigation on the transfer reaction 7Li on 56 Fe at 50MeV incident energy. First

    International Conference of Mathematics and Nuclear Physics, April 2003, Cairo Egypt.

     (Oral Presentation)

     R. I. Badran.

 

 62.  Generation-recombination noise on amorphous semiconductors.

      CHELSEA Amorphous and Organic Semiconductors Meeting, Imperial College Science,

      Technology and Medicine, London, April 5-6 (2001).

      Main C., Reynolds S., R. I. Badran.

 

 63.  Improved high-resolution post-transit spectroscopy for determining the density of states in

      amorphous semiconductors.

      IOP European Workshop on Novel Photovoltaic Materials, University of Bath,

      July (2000). (Oral presentation)

      Main C., Reynolds S., R. I. Badran, and Marshall J. M.

 

 64.   High resolution post-transit current analysis for high resolution density of states

      spectroscopy in semiconductors.

      UK Annual Conference on Amorphous and Organic Semiconductors, University of London,

      April (2000). (Oral Presentation)

      Main C., Reynolds S., R. I. Badran, and Marshall J. M.

 

 65.  Further analysis on the interband transitions of V3+ ions in GaAs and InP hosts

      under uniaxial stresses. The First Conference on Physics and Condensed Matter,

      Mu'ta University, May (1997).(Oral Presentation)

      R. I. Badran.

 

 66.  Dynamical Jahn-Teller effects in the excited 3T1 and 3T2 states of V3+ ion in III-V

      semiconductors.

      Third Conference on Physics of Condensed Matter, Jordan University, 17-21 April (1994).

      R. I. Badran.

 

 67.  The transformation method applied to the E x e  Jahn-Teller system.

      Condensed Matter and Materials Physics Conference (CMMP) 17-19 Dec. (1991),

      International Convention Center- Birmingham- UK.

      R. I. Badran and C. A. Bates.                                                                                                                                      

                                                                                                                                                                                                                                        *

 

 

Important Links

Journal of Nanoelectronics and Optoelectronics (Associate Editor)

http://www.aspbs.com/jno/jno_editorial.htm

Science of Advanced Materials (EBM)

http://www.aspbs.com/sam/editorial_sam.htm

 Journal of Nanoengineering and Nanomanufacturing (EBM)

http://www.aspbs.com/jnan/

Materials Focus (EBM)

 http://www.aspbs.com/mat/editorial_mat.htm

Reviews in Advanced Sciences and Engineering (EBM)

http://www.aspbs.com/rase/

Sensor Letters (EBM)

http://www.aspbs.com/sensorlett/editorial_sensorlett.htm

A study of optical properties of hydrogenated microcrystalline silicon films prepared by plasma enhanced chemical vapor deposition technique at different conditions of excited power and pressure
Vacuum, Volume 83, Issue 7, March 2009, Pages 1023-1030
Badran, R.I.; Al-Hazmi, F.S.; Al-Heniti, S.; Al-Ghamdi, A.A.; Li, J.; Xiong, S

SciVerse ScienceDirect TOP25 Hottest Articles

http://www.sciencedirect.com/science/article/pii/S0042207X0900027X

 

Shortcuts

Prof. Rashad Ibrahim Badran

Field of Specialization: Physics of Nanocrystalline and/or  

                                        Microcrystalline Semiconductors

Faculty of Sciences: Department of Physics

Office: Physics Building 204

                 Room Number 204

                 Tel: (+9625) 3903333

                  Extension: 4203

E-mail: rbadran@hu.edu.jo

 



Students

In this services you have a shortcuts that may help you

Exams

 


Publications

Selected Publications & Scientific Research

The DSR is mainly concerned with promoting and supervising research activities at HU. Scientific research is facing major challenges and constraints, which mandate creating appropriate research environment, effective management protocols, and updated legislations and regulations. As the progress in scientific research necessitates continuous development of supplies and equipment, the Deanship provides financial support to enable researchers to conduct research. The university allocates annually at least 3% of its budget to support scientific research proposals that focus on the needs and priorities of public and private sectors and contribute in solving problems of local communities.


Contact us

 

 
 
  
 

The Hashemite University
P.O. Box 330127, Zarqa 13133, Jordan

huniv@hu.edu.jo